svf13n50t/f/pn _ datasheet hangzhou silan microelectronics co.,ltd rev.: 2.0 http : //www.silan.com.cn page 1 of 9 13 a , 50 0v n - channel mosfet general description svf13n50t/f/pn is a n n - channel enhancement mode power mos field effect transistor which is produced using silan proprietary f - cell tm structure v dmos technology. the improved process and cell structure have be en especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. th is device is widely used in ac - dc power supplie s, dc - dc converters and h - bridge pwm mo tor drivers. features ? 13 a, 50 0v, r ds(on)(typ . ) = 0.44 ? @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability ordering information part no. package marking h azardous s ubstance c ontrol packing svf 13 n 50 f to - 220f - 3l SVF13N50F pb free tube svf13n50t to - 220 - 3l svf13n50t pb free tube svf13n50pn to - 3p 13n50 pb free tube
svf13n50t/f/pn _ datasheet hangzhou silan microelectronics co.,ltd rev.: 2.0 http : //www.silan.com.cn page 2 of 9 absolute maximum ratings ( t c =25 ? c , unless otherwise noted ) characteristics symbol rating s unit svf13n50t SVF13N50F svf13n50pn drain - source voltage v ds 500 v gate - source voltage v gs 30 v drain current t c =25 c i d 13 a t c =100 c 8.2 drain current pulsed i d m 52 a power dissipation ( t c =25 ? c ) - derate above 25 ? c p d 190 51 218 w 1.52 0.41 1.74 w / ? c single pulsed avalanche energy (no te 1) e as 663 mj operation junction temperature rating t j - 55 +150 ? c storage temperature rating t stg - 55 +150 ? c thermal characteristics characteristics symbol rating s unit svf13n50t SVF13N50F svf13n50pn t h ermal resistance, junction - to - case r jc 0.66 2.45 0.57 ? c /w t h ermal resistance, junction - to - ambient r ja 62.5 62.5 50 ? c /w electrical characteristics (t c =25 ? c unless otherwise noted) characteristics symbol test conditions min. typ. max. unit drain C s ource b reakdown v oltage b v dss v gs =0v i d =250a 500 -- -- v d rain - source leakage current i dss v ds = 500 v v gs = 0v -- -- 1 a gate - s ource l eak age c urrent i gss v gs = 30 v v ds =0 v -- -- 10 0 na gate threshold v oltage v gs(th) v gs = v ds i d =250a 2.0 -- 4.0 v o n s tate r esistance r ds(on) v gs = 10 v i d = 6.5 a -- 0.44 0.52 ? input capacitance c iss v ds =25v v gs =0v f=1.0mhz -- 134 0 -- pf output capacitance c oss -- 170 -- reverse transfer capacitance c rss -- 13.0 -- turn - on delay time t d(on) v dd =250v i d = 13 a r g =4.7 ? v gs =10v (note 2,3) -- 25.53 -- ns turn - on rise time t r -- 48.80 -- turn - off delay time t d( off) -- 72.33 -- turn - off fall time t f -- 40.27 -- total gate charge q g v ds =400v i d =13a v gs =10v (note 2,3) -- 29.5 -- nc gate - source charge q gs -- 8.00 -- gate - drain charge q gd -- 12.3 --
svf13n50t/f/pn _ datasheet hangzhou silan microelectronics co.,ltd rev.: 2.0 http : //www.silan.com.cn page 3 of 9 source - drain diode ratings and characteristi cs characteristics symbol test conditions min. typ. max. unit continuous source current i s integral reverse p - n junction diode in the mosfet -- -- 13 a pulsed source current i sm -- -- 52 diode forward voltage v sd i s =13a v gs =0v -- -- 1. 3 v reverse recovery time t rr i s =13a v gs =0v di f /dt=100a/ s (note 2) -- 495 -- ns reverse recovery charge q rr -- 5.0 -- c notes: 1. l= 30 mh , i as = 7.5 a , v dd = 100 v , r g =25 ? , starting t j =25 ? c ; 2. pulse test: pulse width 300s,duty cycle2%; 3. essentially independent of operati ng temperature. typical characteristics figure 1 . on - region characteristics figure 2 . transfer characteristics 0 . 1 1 100 0 . 1 1 10 100 drain - source voltage C v ds ( v ) 0 2 4 6 8 10 1 3 5 7 9 gate - source voltage C v gs ( v ) 0 . 40 0 . 44 0 . 46 0 . 48 0 2 8 10 drain current C i d ( a ) figure 3 . on - resistance variation vs . drain current and gate voltage 0 0 . 2 0 . 4 0 . 6 1 . 2 1 . 0 source - drain voltage C v sd ( v ) figure 4 . body diode forward voltage variation vs . source current and temperature 0 . 50 4 v gs = 4 . 5 v v gs = 5 v v gs = 5 . 5 v v gs = 6 v variable notes : 1 . 250 s pulse test 2 . t c = 25 c v gs = 7 v v gs = 8 v v gs = 10 v v gs = 15 v notes : 1 . 250 s pulse test 2 . v ds = 50 v - 55 c 25 c 150 c 10 0 . 1 1 100 10 6 0 . 1 100 0 . 8 0 . 42 - 55 c 25 c 150 c 1 10 notes : 1 . 250 s pulse test 2 . v gs = 0 v note : t j = 25 c v gs = 10 v v gs = 20 v
svf13n50t/f/pn _ datasheet hangzhou silan microelectronics co.,ltd rev.: 2.0 http : //www.silan.com. cn page 4 of 9 typical characteristics(continued) d r a i n - s o u r c e b r e a k d o w n v o l t a g e ( n o r m a l i z e d ) C b v d s s d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) C r d s ( o n ) c a p a c i t a n c e ( p f ) g a t e - s o u r c e v o l t a g e C v g s ( v ) d r a i n c u r r e n t - i d ( a ) d r a i n c u r r e n t - i d ( a )
svf13n50t/f/pn _ datasheet hangzhou silan microelectronics co.,ltd rev.: 2.0 http : //www.silan.com.cn page 5 of 9 typical characteristics(continued) dc 10 ms 1 ms 100 s 10 - 2 10 - 1 10 0 10 1 10 0 10 1 10 2 10 3 10 2 d r a i n c u r r e n t - i d ( a ) operation in this area is limited by r ds ( on ) notes : 1 . t c = 25 c 2 . t j = 150 c 3 . single pulse figure 9 - 3 . max . safe operating area ( svf 13 n 50 pn ) drain source voltage - v ds ( v ) figure 10 . maximum drain current vs . case temperature d r a i n c u r r e n t - i d ( a ) case temperature C t c ( c ) 25 50 75 100 125 150 0 2 4 6 12 8 10 14
svf13n50t/f/pn _ datasheet hangzhou silan microelectronics co.,ltd rev.: 2.0 http : //www.silan.com.cn page 6 of 9 typical test circuit 12 v 50 k 300 nf same type as dut dut v gs 3 ma v ds v gs 10 v charge qg qg s qg d gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10 v v ds v gs 10 % 90 % td ( on ) t on tr td ( off ) t off t f unclamped inductive switching test circuit & waveform v ds r g v dd 10 v l tp i d bv dss i as v dd tp time v ds ( t ) i d ( t ) e as = 1 - 2 li as 2 bv dss bv dss v dd dut dut 200 nf
svf13n50t/f/pn _ datasheet hangzhou silan microelectronics co.,ltd rev.: 2.0 http : //www.silan.com.cn page 7 of 9 package outline to - 220 f - 3l unit: mm to - 220 - 3l : mm
svf13n50t/f/pn _ datasheet hangzhou silan microelectronics co.,ltd rev.: 2.0 http : //www.silan.com.cn page 8 of 9 package outline to - 3p unit: mm d isclaimer : ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could c ause loss of body injury or damage to property. ? silan will supply the best possible product for customers!
svf13n50t/f/pn _ datasheet hangzhou silan microelectronics co.,ltd rev.: 2.0 http : //www.si lan.com.cn page 9 of 9 part no.: svf13n50t/f/pn document type: datasheet copyright: hangzhou silan microelectronics co.,ltd website: http: //www.silan.com.cn rev.: 2.0 revision history: 1. add another solid figure of to - 220 - 3l rev.: 1.9 revision history: 1. modify the electrical characteristics rev.: 1.8 revision history: 1. modi fy the package information of to - 220f - 3l 2. modify the package information of to - 220 - 3l rev.: 1.7 revision history: 1. modify the thermal characteristics rev.: 1.6 revision history: 1. modify the o rdering information rev.: 1.5 revision history: 1. change the schematic diagram of mos rev.: 1.4 revision history: 1. modify electrical characteristics rev.: 1.3 revision history: 1. modify the values of t rr and q rr rev.: 1.2 revision history: 1. add the halogen free information of SVF13N50F rev.: 1.1 revision history: 1. m odify package outline rev.: 1.0 revision history: 1. original
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